Method of manufacturing semiconductor device
AssigneeHitachi, Ltd.
InventorsAkemi Moniwa, Hiroshi Fukuda, Fumio Murai
Life of this patent
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Abstract
To provide a method of manufacturing a semiconductor device for manufacturing a minute pattern with high accuracy using a stencil mask. An input layout data is classified into rectangles according to pattern width or the like, a boundary is created that divides a periphery or an inside of each classified graphics, an input pattern is fractionized by the boundary, and a complementary mask with fractionized patterns on both sides of the boundary distributed into different layers is used to form a pattern.
Claims24
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a photosensitive layer on a semiconductor substrate;
- forming a latent image on said photosensitive layer by successively irradiating first and second stencil masks having an opening pattern with an energy beam, said opening pattern being generated by a method that includes, when given layout data is divided into complementary mask data, a layout data reading step;
- a boundary creating step of creating a boundary for dividing said layout data into a complementary mask;
- and a complementary layer generating step of dividing said layout data into fractionized patterns by said boundary and distributing fractionized patterns in such a manner that adjacent patterns via said boundary are in different layers;
- developing said photosensitive layer;
- and
- processing said semiconductor substrate using said photosensitive layer having a pattern as a mask.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a photosensitive layer on a semiconductor substrate;
- forming a latent image on said photosensitive layer by successively irradiating first and second stencil masks having an opening pattern with an energy beam, said opening pattern being generated by a method that includes, when given layout data is divided into complementary mask data, a layout data reading step;
- a processing parameter reading step;
- a step of extracting a corner graphics from said layout data;
- a step of determining said corner graphics as a first complementary layer data;
- a step of removing said first complementary layer data from said layout data to be a second complementary layer;
- and a test step of testing said complementary layer data;
- developing said photosensitive layer;
- and
- processing said semiconductor substrate using said photosensitive layer having a pattern as a mask.
Dependencies are inferred from the claim text.