High resistivity film for 4T SRAM
AssigneeAgere Systems Inc.
InventorsSeungmoo Choi, Amal M. Hamad, Felix Llevada, Vivek Saxena, Paul Yih
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Abstract
The present invention provides a method of manufacturing a resistor for use in a memory element and a semiconductor device employing the resistor. The method of manufacturing may comprise forming a dielectric layer over an active region of a semiconductor wafer and forming a resistive layer on the dielectric layer. The resistive layer comprises a compound wherein a first element of the compound is a Group III or Group IV element and a second element of the compound is a Group IV or Group V element. The method further comprises connecting an electrical interconnect structure to the resistive layer that electrically connects the resistive layer to the active region.
Claims9
A method of forming a planar resistor, comprising:
- forming a dielectric layer over an active region of a semiconductor wafer;
- and
- forming a resistive layer on the dielectric layer, the resistive layer consisting of gallium nitride and configured to allow a current flow in a substantially horizontal plane;
- and
- connecting an electrical interconnect structure to the resistive layer that electrically connects the resistive layer to the active region.
A method of forming a semiconductor device on a semiconductor wafer substrate, comprising:
- forming an active region in and a gate on the semiconductor wafer substrate;
- forming a dielectric layer over the active region and gate;
- forming a planar resistor over the semiconductor wafer substrate, including:
- forming a resistive layer over the dielectric layer, the resistive layer consisting of gallium nitride and configured to allow a current flow in a substantially horizontal plane;
- and
- connecting an electrical interconnect structure to the resistive layer that electrically connects the resistive layer to the active region.
Dependencies are inferred from the claim text.