Method for fabricating thin film transistor including crystalline silicon active layer
AssigneeSeung Ki Joo
InventorsSeung Ki Joo, Seok-Woon Lee
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Abstract
The invention provides a method for fabricating a TFT including a crystalline silicon active layer. The inventive method forms a metal offset region between the metal layer used to induce the cystallization of the active layer and the channel region of the TFT without introducing an additional process such as photoresist processing. Therefore, the inventive method improves the performance and manufacturing productivity of TFT and lower its production cost as well.
Claims18
A method for fabricating a thin film transistor (TFT) including a silicon active layer, the method comprising the steps of:
- providing a substrate;
- depositing an amorphous silicon layer on the substrate to provide an active layer of the TFT;
- forming a gate insulation layer and a gate electrode on the amorphous silicon layer;
- doping the amorphous silicon layer with impurity to form a source region, a drain region and a channel region of the active layer and depositing a crystallization inducing metal on at least a portion of the amorphous silicon layer;
- crystallizing the amorphous silicon layer crystallization by conducting thermal treatment thereof,
- wherein the crystallization inducing metal is offset from the channel region of the active layer using a mask which does not include a photoresist layer.
A method for fabricating a thin film transistor (TFT) including a silicon active layer, the method comprising the steps of:
- providing a substrate;
- depositing an amorphous silicon layer on the substrate to provide an active layer of the TFT;
- forming a gate insulation layer and a gate electrode on the amorphous silicon layer;
- doping the amorphous silicon layer with impurity to form a source region, a drain region and a channel region of the active layer and depositing a crystallization inducing metal on at least a portion of the amorphous silicon layer;
- crystallizing the amorphous silicon layer crystallization by conducting thermal treatment thereof;
- wherein the crystallization inducing metal is offset from the channel region of the active layer using a photoresist mask which is formed by processing a photoresist layer used to pattern the gate electrode and remaining on the top of the patterned gate electrode.
Dependencies are inferred from the claim text.