Method of forming fine pattern

Abstract

There is described a method of forming a fine pattern aimed at depositing a silicon-nitride-based anti-reflection film which is stable even at high temperature and involves small internal stress. The method is also intended to preventing occurrence of a footing pattern (a rounded corner) in a boundary surface between a photoresist and a substrate at the time of formation of a chemically-amplified positive resist pattern on the anti-reflection film. The method includes the steps of forming a silicon-nitride-based film directly on a substrate or on a substrate by way of another layer; and forming a photoresist directly on the silicon-nitride-based film or on the silicon-nitride-based film by way of another layer. The silicon-nitride-based film is deposited while the temperature at which the substrate is to be situated is set so as to fall within the range of 400 to 700° C., through use of a plasma CVD system. The method further includes a step of depositing a silicon-oxide-based film immediately below the photoresist. The silicon-oxide-based film is deposited while the temperature at which the substrate is to be situated is set so as to fall within the range of 400 to 700° C., through use of a plasma CVD system.

Dependencies are inferred from the claim text.