Etch improved resist systems containing acrylate (or methacrylate) silane monomers

A positive chemically amplified photoresist used for O2 and Cl2/O2 gas etch applications comprising a polymer with the following general structure:

• wherein:
• a is from about 5 to about 70;
• b is from about 3 to about 35;
• c is from about 0 to about 92;
• R1 is H, C1-C4 alkyl, aryl, CN, or a halogen;
• R2 is H or C1-C4 alkyl;
• R3 is a protective room temperature reactive group selected from the group consisting of silylethers, cyclic acetals and cyclic ketals;
• R4 is an alkyl, hydrogen, halogen, aromatic or another cyclic alkyl group;
• R5 is a silicon-oxygen group maintained thereon;
• n is 1, 2, 3, 4, 5, or 6;
• and
• a+b+c=100%.

A method of forming a patterned material structure on a substrate, said material being selected from the group consisting of semiconductors, ceramics and metals, said method comprising:

• (A) providing a substrate with a layer of said material,
• (B) applying a chemically amplified resist composition to said substrate to form a resist layer on said substrate, said resist composition comprising:
• wherein:
• a is from about 5 to about 70;
• b is from about 3 to about 35;
• c is from about 0 to about 92;
• R1 is H, C1-C4 alkyl, aryl, CN, or a halogen;
• R2 is H or C1-C4 alkyl;
• R3 is a protective room temperature reactive group selected from the group consisting of silylethers, cyclic acetals and cyclic ketals;
• R4 is an alkyl, hydrogen, halogen, aromatic or another cyclic alkyl group;
• R5 is a silicon-oxygen group maintained thereon;
• n is 1, 2, 3, 4, 5, or 6;
• and
• a+b+c=100%.
• (C) patternwise exposing said substrate to radiation whereby acid is generated by said acid generator in exposed regions of said resist layer by said radiation,
• (D) contacting said substrate with an aqueous alkaline developer solution, whereby portions of said resist layer are selectively dissolved by said developer solution to reveal a patterned resist structure, and
• (E) transferring resist structure pattern to said material layer, by etching into said material layer through spaces in said resist structure pattern.