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US 6,585,910 B1Granted
Etchant
AssigneeStella Chemifa Corporation
InventorsHirohisa Kikuyama, Masayuki Miyashita, Tatsuhiro Yabune, Tadahiro Ohmi
Life of this patent
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Abstract
An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.
Claims2
An etchant, comprising:
- a combination including hydrofluoric acid of 15 percent by weight to 19 percent by weight and ammonium fluoride of 12 percent by weight to 42 percent by weight, said combination having a hydrogen ion concentration of 10−6.0 mol/L to 10−1.8 mol/L.
Dependencies are inferred from the claim text.