Slurry for chemical mechanical polishing
AssigneesNEC Electronics Corporation, Tokyo Magnetic Printing Co., Ltd.
InventorsYasuaki Tsuchiya, Tomoko Wake, Tetsuyuki Itakura, Shin Sakurai, Kenichi Aoyagi
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Abstract
By using a polishing slurry which contains, at least, a polishing grain, an oxidizing agent and a basic amino acid compound, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.
Claims18
A slurry for chemical mechanical polishing to polish a copper-containing metal film formed on a tantalum-containing metal film, which comprises a polishing grain, an oxidizing agent and a basic amino acid compound selected from the group consisting of arginine, arginine derivative, lysine, lysine derivative, histidine and histidine derivative, wherein the slurry has a pH of not less than 3 but not greater than 9.
Dependencies are inferred from the claim text.