Chemical mechanical polishing slurry
AssigneesNEC Electronics Corporation, Tokyo Magnetic Printing Co., Ltd.
InventorsYasuaki Tsuchiya, Tomoko Wake, Tetsuyuki Itakura, Shin Sakurai, Kenichi Aoyagi
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Abstract
This invention provides a chemical mechanical polishing slurry for polishing a copper-based metal film formed on an insulating film comprising a concave on a substrate, comprising a polishing material, an oxidizing agent and water as well as a benzotriazole compound and a triazole compound. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing.
Claims8
A chemical mechanical polishing slurry for polishing a copper-based metal film formed on an insulating film, comprising a polishing material, an oxidizing agent and water as well as a benzotriazole compound and a triazole compound, wherein the mixing ratio of the triazole compound to the benzotriazole compound is 5 to 70.
Dependencies are inferred from the claim text.