Microelectronic fabrication having microelectronic capacitor structure fabricated therein
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Feng Huang, Chun-Hon Chen
Life of this patent
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Abstract
Within a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing the method, there is formed within the microelectronic fabrication a capacitor structure upon a conductor stud layer formed into a first via defined by a patterned dielectric layer to reach a one of a pair of patterned conductor layers within the microelectronic fabrication prior to forming through the patterned dielectric layer a second via to reach the other of the pair of patterned conductor layers within the microelectronic fabrication. The method provides the resulting microelectronic fabrication with enhanced reliability and performance.
Claims5
A microelectronic fabrication comprising:
- a substrate;
- a first dielectric layer formed over the substrate, the first dielectric layer having formed exposed therein a pair of patterned first conductor layers such that a series of upper surfaces of the first dielectric layer and the pair of patterned first conductor layers is planar;
- a multilayer patterned dielectric layer formed over the first dielectric layer, the multilayer patterned dielectric layer having a capacitor structure formed interposed between a pair of dielectric layers within the multilayer dielectric layer, the capacitor structure being registered with respect to a first one of the pair of patterned conductor layers, the multilayer patterned dielectric layer having a first via interposed between the capacitor structure and the first one of the pair of patterned conductor layers and a second via formed completely through the multilayer dielectric layer to access a second of the pair of patterned conductor layers;
- and
- a first conductor contact stud layer formed within the first via and a single layer second conductor stud layer formed within the second via.
Dependencies are inferred from the claim text.