Schottky diode
AssigneeKoninklijke Philips Electronics N.V.
InventorThomas Epke
Life of this patent
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Abstract
The invention relates to a semiconductor device, in particular a Schottky hybrid diode with a guard ring (S). The semiconductor device comprises a semiconductor substrate (1), an epitaxial layer (2) on which an insulating layer (3) with an opening (10) is deposited, with a Schottky metal layer (9) covering the epitaxial layer (2) lying at the bottom of the opening (10), and with an annular semiconductor region (4) which is present in the epitaxial layer (2). A doping region (6) is present in the epitaxial layer (2) along the outer contour of the semiconductor device, and in addition an oxide layer (8) is present on the epitaxial layer (2).
Claims10
A semiconductor device provided with a semiconductor substrate (1) with a dopant of a first doping type (5) with a doping concentration n1 on which an epitaxial layer (2) with a dopant of a first doping type (5) with a doping concentration n2 is provided, whereon an insulating layer (3) with an opening (10) is deposited, with a Schottky metal layer (9) covering the epitaxial layer (2) lying below said opening (10), with an annular semiconductor region (4) lying in the epitaxial layer (2) and comprising a dopant of a second doping type (7) with a doping concentration n3 which adjoins the insulating layer (3) and the Schottky metal layer (9) in a region surrounding the metal-insulator transition, with a doping region (6) present in the epitaxial layer (2) and comprising a dopant of a first doping type (5) with a doping concentration n4 and the dopant of a second doping type (7) with a doping concentration n3 along the outer contour of the semiconductor device, and with an oxide layer (8) which is present on the epitaxial layer (2), which adjoins the insulating layer (3), and which extends along the outer contour of the semiconductor device.
Dependencies are inferred from the claim text.