Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Takeshi Fukunaga
Life of this patent
Estimating the term…
Abstract
There is provided a semiconductor device having a new structure which allows a high reliability and a high field effect mobility to be realized in the same time. In an insulated gate transistor having an SOI structure utilizing a mono-crystal semiconductor thin film on an insulating layer, pinning regions are formed at edge portions of a channel forming region. The pinning regions suppress a depletion layer from spreading from the drain side and prevent a short-channel effect. In the same time, they also function as a path for drawing out minority carriers generated by impact ionization to the outside and prevent a substrate floating effect from occurring.
Claims24
A semiconductor device comprising:
- a semiconductor film formed on an insulating surface, said semiconductor film having a source region, a drain region and a channel forming region;
- a gate electrode formed adjacent to said channel forming region with a gate insulating film interposed therebetween;
- and
- a pair of regions formed at side edges of said channel forming region in a way which extends in parallel to a channel length direction, said pair of regions shifting an energy band of said channel forming region.
A semiconductor device comprising:
- a semiconductor film formed on an insulating surface, said semiconductor film having a source region, a drain region and a channel forming region;
- a gate electrode formed adjacent to said channel forming region with a gate insulating film interposed therebetween;
- and
- a pair of regions formed at aide edges of said channel forming region in a which extends in parallel to a channel length direction, said pair of regions shifting an energy band of said channel forming region,
- wherein said pair of regions reaches inside of said source region and drain region.
A semiconductor device comprising:
- a semi-conductor film formed on an insulating surface, said semiconductor film having a source region, a drain region and a channel forming region;
- a gate electrode formed adjacent to said channel forming region with a gate insulating film interposed therebetween;
- and
- a pair of regions formed at side edges of said channel forming region in a way which extends in parallel to a channel length direction,
- wherein an energy potential barrier of said pair of regions is higher than that of said channel forming region.
A semiconductor device comprising:
- a semiconductor film formed on an insulating surface, said semiconductor film having a source region, a drain region and a channel farming region;
- a gate electrode formed adjacent to said channel forming region with a gate insulating film interposed therebetween;
- and
- a pair of regions formed at side edges of said channel forming region in a way which extends in parallel to a channel length direction,
- wherein an energy potential barrier of said pair of regions is higher than that of said channel forming region,
- wherein said pair of regions reaches inside of said source region and drain region.
A semiconductor device comprising:
- a single-crystalline semiconductor film formed on an insulating surface, said single-crystalline semiconductor film having a source region, a drain region and a channel forming region;
- a gate electrode formed adjacent to said channel forming region with a gate insulating film interposed therebetween;
- and
- a pair of regions formed at side edges of said channel forming region in a way which extends in parallel to a channel length direction,
- wherein an energy potential barrier of said pair of regions is higher than that of said channel forming region.
A semiconductor device comprising:
- a single-crystalline semiconductor film formed on an insulating surface, said single-crystalline semiconductor film having a source region, a drain region and a channel forming region;
- a gate electrode formed adjacent to said channel forming region with a gate insulating film interposed therebetween;
- and
- a pair of regions formed at side edges of said channel forming region in a way which extends in parallel to a channel length direction,
- wherein an energy potential barrier of said pair of regions is higher than that of said channel forming region,
- wherein said pair of regions reaches inside of said source region and drain region.
Dependencies are inferred from the claim text.