Code addressable memory cell in a flash memory device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsMin Kyu Kim, Byung Jin Ahn, Ju Yeab Lee, Sheung Hee Park
Life of this patent
Estimating the term…
Abstract
There is disclosed a code addressable memory (“CAM”) cell in a flash memory device. In order to stabilize the operation of the CAM cell in a flash memory device operating at a low voltage, the present invention manufactures a CAM cell in which a floating gate is formed to extend on more than two active regions and more than two cell arrays are connected in parallel commonly using a source region and a drain region. Therefore, the present invention can increase the gate-coupling ration of the CAM cell, thus stabilizing the operation of the CAM cell at a device for low-voltage use.
Claims2
A code addressable memory cell in a flash memory device, comprising:
- field oxide films formed on a semiconductor substrate in order to define active regions;
- a floating gate electrically isolated from said semiconductor substrate by a tunnel oxide film, said floating gate overlapping said field oxide film and at least two of said active regions isolated by said field oxide film;
- a dielectric film formed on said floating gate;
- a control gate formed on said dielectric film, said control gate overlapping said floating gate;
- a plurality of sources and a plurality of drains isolated by said control gate, each formed in said plurality of active regions;
- and
- a source line connecting said plurality of sources and a drain line connecting said plurality of drains.
Dependencies are inferred from the claim text.