Memory cell using amorphous material to stabilize the boundary face between polycrystalline semiconductor material of a capacitor and monocrystalline semiconductor material of a transistor

A memory cell array having memory cells, comprising:

• a capacitor electrode formed of a polycrystalline semiconductor material;
• a monocrystalline semiconductor region forming an electrical connection with said polycrystalline semiconductor material of said capacitor electrode, said monocrystalline semiconductor region and said polycrystalline semiconductor material of said capacitor electrode having a common boundary surface;
• and
• a plurality of islands formed of an amorphous material;
• and
• a plurality of electrical connection regions providing said electrical connection between said polycrystalline semiconductor material and said monocrystalline semiconductor region, said plurality of electrical connection regions and said plurality of islands alternatingly disposed in a direction parallel to said surface of said monocrystalline semiconductor region.