Back to results
US 6,583,063 B1Granted
Plasma etching of silicon using fluorinated gas mixtures
AssigneeApplied Materials, Inc.
InventorsAnisul Khan, Dragan Podlesnik, Nam-Hun Kim, Gene Lee
Life of this patent
Estimating the term…
Abstract
A method of etching silicon using a plasma generated from a gas comprising fluorine (F), oxygen (O), hydrogen (H) and carbon (C).
Claims18
A method of silicon etching comprising the steps of:
- supplying a first gas comprising fluorine (F), a second gas comprising oxygen (O), and a third gas comprising carbon (C) and hydrogen (H) to a chamber wherein the second gas comprising oxygen (O) and the third gas comprising carbon (C) and hydrogen (H) are present in a ratio greater than about 1.5:1;
- igniting a plasma within said chamber;
- and
- etching a silicon material layer within said chamber.
1 more element
A method of etching comprising the steps of:
- supplying a gas mixture comprising SF6, O2, and CH2F2 to a chamber wherein the O2 and the CH2F2 are present in a ratio greater than about 1.5:1;
- igniting a plasma within said chamber by applying a bias power to a cathode electrode of 10 to 500 watts and by applying an inductive source power to an inductively coupled antennae of 300 to 5000 watts;
- and
- etching a silicon material layer within said chamber.
1 more element
Dependencies are inferred from the claim text.