Back to results
US 6,583,059 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeSharp Kabushiki Kaisha
InventorYasuhiko Sueyoshi
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device comprises the steps of: (a) forming a thermal oxide film on a surface of a silicon layer; (b) removing the thermal oxide film; and (c) forming a silicide film on the resulting surface of the silicon layer.
Claims9
A method of manufacturing a semiconductor device, the method comprising:
- (a) forming a thermal oxide film on a surface of a conductive gate electrode comprising silicon;
- (b) removing the thermal oxide film from the gate electrode;
- and
- (c) forming a suicide film on at least the resulting surface of the gate electrode from which the thermal oxide film has been removed.
1 more element
A method of manufacturing a semiconductor device, the method comprising:
- forming a gate electrode comprising silicon so as to be supported by a substrate;
- forming a thermal oxide film on a surface of the gate electrode comprising silicon;
- removing at least part of the thermal oxide film from the gate electrode;
- and
- forming a film comprising a silicide on at least the resulting surface over the gate electrode from which the thermal oxide has been removed.
2 more elements
Dependencies are inferred from the claim text.