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US 6,583,036 B1Granted
Method of manufacturing a semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTaichi Hayamizu
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Abstract
On a substrate, a gate insulating film, a polysilicon film on the gate insulating film, and a resist pattern on the polysilicon film are formed. Subsequently an exposed portion of the polysilicon film which is not covered with the resist pattern is removed. The surface of the polysilicon film left after the step of removing the exposed portion of the polysilicon film is thermally oxidized to form a gate electrode and an insulating film simultaneously on the surface of the gate electrode.
Claims1
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a gate insulating film on a substrate;
- forming a polysilicon film on said gate insulating film;
- forming a nitride film on said polysilicon film;
- forming a resist pattern on said nitride film and subsequently removing an exposed portion of said nitride film which is not covered with said resist pattern, thereby forming a nitride film pattern;
- removing the exposed portion of said polysilicon film which is not covered with said nitride film;
- thermally oxidizing the surface of said polysilicon film left after the step of removing the exposed portion of said polysilicon film to simultaneously form a gate electrode and an insulating film on said surfaces of said gate electrode;
- removing the nitride film pattern on the upper surface of said gate electrode;
- and
- forming a silicide on the upper surface of said gate electrode through the insulating film on side surfaces on said gate electrode used as a mask after removing the nitride film pattern.
6 more elements
Dependencies are inferred from the claim text.