Method for producing an integrated circuit processed on both sides
AssigneeGiesecke & Devrient GmbH
InventorThomas Grassl
Life of this patent
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Abstract
A method for producing an integrated circuit wherein a substrate is provided that includes a circuit structure and a first metalization structure disposed thereover comprising at least one layer with plated holes extending therethrough and into the circuit structure. The plated holes are insulated and a planarizing layer is disposed over the metalization structure. A handling wafer is applied over the substrate permitting the substrate to be thinned such that metalized connections disposed in the plated holes are exposed. A second metalization structure is provided and connected to the circuit structure and/or the first metalization structure by the metalized connections.
Claims19
A method for producing an integrated circuit wherein a first substrate is first provided with a circuit structure (1) and a first metalization structure (2,3) disposed over a first side thereof and including one or more layers with plated holes extending therethrough and into the circuit structure (1), the plated holes (4) being insulated against the circuit structure (1) and provided with metalized connections (5), a planarizing layer (7) being disposed over the first metalization structure (2,3), the first substrate being rebonded to a handling wafer (8), a second side opposite the first side of the first substrate being thinned so that the plated holes (4) are open and metalized connections (5) are exposed,
- comprising producing a second metalization structure (10, 11) connected with the first metalization structure (2, 3) and/or the circuit structure (1) by means of the metalized connections (5) on the second side of the circuit structure (1).
An integrated circuit with a substrate including a circuit structure (1) and a first metalization structure (2, 3) having at least one metalization layer and disposed over a first side of the circuit structure (1), comprising:
- a second metalization structure (10, 11) disposed over a second side of the circuit structure (1), the first and second metalization structures being connected by means of interchip connections;
- wherein at least one metalization layer of at least one of the first and second metalization structures is an intrusion detection screen.
A module for incorporation in a smart card having an integrated circuit with a substrate including a circuit structure and a first metalization structure (2, 3) having at least one metalization layer and disposed over a first side of the circuit structure (1), comprising:
- a second metalization structure (10, 11) disposed over a second side of the circuit structure (1), the first and second metalization structures being connected by means of interchip connections;
- wherein at least one metalization layer of at least one of the first and second metalization structures is an intrusion detection screen.
Dependencies are inferred from the claim text.