Method of ion implantation
AssigneeApplied Materials, Inc.
InventorsYasuhiko Matsunaga, Majeed Ali Foad
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Abstract
An ion implantation method which can accurately control the effective dose amount even in ion implantation at a very low energy. This ion implantation method comprises the steps of carrying out preamorphization ion implantation for a semiconductor substrate in an ion implantation apparatus; then cleaning the surface of semiconductor substrate in a cleaning apparatus so as to eliminate an oxidized film; and thereafter carrying out ion implantation again in the ion implantation apparatus under a low implantation energy so as to form a shallow junction in the semiconductor substrate. As a consequence, the influence of the oxidized film formed by preamorphization ion implantation can be suppressed, whereby the effective dose can be controlled accurately.
Claims5
An ion implantation method comprising:
- a first ion implanting of a surface of a semiconductor substrate to attain an amorphous state;
- cleaning said surface of the semiconductor substrate subjected to said first ion implanting;
- exposing said surface of the semiconductor substrate to oxygen for a time sufficient to form an oxide layer on said surface;
- and
- a second ion implanting under a low implantation energy to form a shallow junction in said semiconductor substrate.
Dependencies are inferred from the claim text.