Reducing secondary injection effects
AssigneeSaifun Semiconductors Ltd.
InventorBoaz Eitan
Life of this patent
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Abstract
A method for forming a non-volatile memory (NVM) device, the method including forming two diffusion areas in a substrate, said diffusion areas forming a channel therebetween, the channel being adapted to permit movement of primary electrons to at least one of the diffusion areas, forming a non-conducting charge trapping layer at least over the channel, and managing at least one of movement of secondary electrons from the substrate towards the charge trapping layer and a punch-through voltage in the substrate by controlling a position of a concentration of an electron acceptor dopant in the substrate.
Claims18
A method for forming a non-volatile memory (NVM) device, the method comprising:
- forming two diffusion areas in a substrate, said diffusion areas forming a channel therebetween, said channel being adapted to permit movement of primary electrons to at least one of said diffusion areas;
- forming a non-conducting charge trapping layer at least over said channel;
- and
- managing at least one of movement of secondary electrons from said substrate towards said charge trapping layer and a punch-through voltage in said substrate by controlling a position of a concentration of an electron acceptor dopant in said substrate.
A non-volatile memory (NVM) device comprising:
- a channel formed in a substrate;
- two diffusion areas, one on either side of said channel in said substrate, each diffusion area having a junction with said channel, said channel being adapted to permit movement of primary electrons to at least one of said diffusion areas;
- a non-conductive charge trapping layer formed at least over said channel;
- and
- an electron acceptor dopant concentrated less near an upper surface of said substrate, said upper surface comprising an interface between said substrate and said charge trapping layer, and concentrated more further from said upper surface of said substrate.
Dependencies are inferred from the claim text.