Method for controlling a semiconductor manufacturing process

A method for dynamically controlling manufacture of a semiconductor device;

• said manufacture including a plurality of etch process steps;
• each respective etch step of said plurality of etch steps being performed for a respective etch interval;
• the method comprising the steps of:
• (a) ascertaining a relationship among three specific etch intervals of said plurality of etch intervals;
• (b) determine a first said respective etch interval required for a first said specific etch interval to effect a predetermined result in said semiconductor device;
• (c) using said relationship to determine said respective etch interval for a second said specific etch interval of said three specific etch intervals in order to fix a third said specific etch interval of said three specific etch intervals.

A method for dynamically controlling a process for manufacturing a semiconductor device;

• said process including a plurality of process segments;
• each respective process segment of said plurality of process segments being performed for a respective processing interval;
• the method comprising the steps of:
• (a) determining a relationship among three specific processing intervals for three specific process segments of said plurality of process segments;
• (b) performing a first said specific process segment for a first processing interval;
• said first processing interval being established when a predetermined result is achieved in said semiconductor device;
• (c) using said relationship to determine a second processing interval for a second said specific process segment of said three specific process segments;
• said second processing interval being established appropriately to fix a third processing interval for said third specific processing segment;
• and
• (d) performing said second specific process segment for said second processing interval.