Chemical amplification resist compositions and process for the formation of resist patterns

A process for the formation of resist patterns which comprises the steps of:

• coating a chemical amplification resist composition on a substrate to be fabricated, said resist composition comprising a combination of an alkali-soluble base resin, a photoacid generator and a dissolution inhibitor, in which said dissolution inhibitor is a compound of the following formula (II):
• wherein
• A represents atoms necessary to complete a cyclic or acyclic structure constituting a matrix portion of the molecule of said dissolution inhibitor,
• SIG may be the same or different and each represents a dissolution inhibiting group capable of being released from said cyclic or acyclic structure A, to which said dissolution inhibiting group is indirectly bonded through a linkage group L, upon the action of an acid which is released from said photoacid generator, and is concentratedly distributed in the molecule of said dissolution inhibitor,
• L is a linkage group connecting the SIG group to said structure A, and may be independently included for each SIG group or may be commonly included for two or more SIG groups with the proviso that the number of atoms contained between the adjacent SIG groups is not more than 4, and
• n represents the number of said SIG groups bonded to said structure A and is an integer of 3 or more, thereby forming a resist coating on said substrate;
• selectively exposing said resist coating to a patterning radiation capable of causing a decomposition of said dissolution inhibitor compound;
• and
• developing the exposed resist coating with an aqueous alkaline solution.

A process for the formation of resist patterns which comprises the steps of:

• coating a chemical amplification resist composition on a substrate to be fabricated, said resist composition comprising a combination of an alkali-soluble base resin, a photoacid generator and a dissolution inhibitor, in which said dissolution inhibitor is a compound of the following formula (III):
• wherein
• A represents atoms necessary to complete a cyclic or acyclic structure constituting a matrix portion of the molecule of said dissolution inhibitor,
• SIG may be the same or different and each represents a dissolution inhibiting group capable of being released from said cyclic or acyclic structure A, to which said dissolution inhibiting group is directly or indirectly bonded, upon the action of an acid which is released from said photoacid generator, said SIG group being a member selected from the group consisting of:
• wherein
• R5, R6 and R7 may be the same or different and each represents hydrogen or any substituent group with the proviso that at least one of said substituent groups is a halogenated alkyl group of 3 or less carbon atoms, and
• n represents the number of said dissolution inhibiting groups SIG bonded to said structure A and is an integer of 3 or more, and has a molecular weight of 300 to 1500, thereby forming a resist coating on said substrate;
• selectively exposing said resist coating to a patterning radiation capable of causing a decomposition of said dissolution inhibitor compound;
• and
• developing the exposed resist coating with an aqueous alkaline solution.