Photomask having small pitch images of openings for fabricating openings in a semiconductor memory device and a photolithographic method for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-woo Lee, Hak Kim
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Abstract
A photomask having small pitch images of openings for fabricating an opening of a semiconductor memory device includes a plurality of images of openings arranged in a row direction with a predetermined pitch to be used to transfer the images of openings onto a photoresist layer, and is used for a photolithographic process employing a photoresist flow process. The distance between the centers of the images of openings arranged in the photomask is larger than the pitch. A photolithographic method for fabricating reduced size openings and a semiconductor memory device having openings fabricated using the same method is also provided.
Claims6
A photomask having a plurality of images of openings arranged in a row direction with a predetermined pitch for fabricating corresponding openings in a semiconductor memory device, and for transferring the images of openings onto a photoresist layer, wherein the photomask is used for a photolithographic process employing a photoresist flow process, and wherein a distance between the centers of the images of openings is larger than the pitch.
Dependencies are inferred from the claim text.