Simplified method of fabricating a rim phase shift mask

A method of fabricating a phase shifting mask for use in the manufacture of an integrated circuit device comprising:

• providing a transparent substrate;
• depositing a phase shifting layer overlying said transparent substrate;
• depositing an opaque layer overlying said phase shifting layer;
• depositing a resist layer overlying said opaque layer;
• patterning said resist layer;
• etching said opaque layer and said phase shifting layer wherein said resist layer masks said etching, wherein said opaque layer is etched through, wherein notches are etched into said phase shifting layer at the edges of said opaque layer, wherein said notches cause a phase shift in incident light relative to incident light passing through regions in said phase shifting layer adjacent to said notches, and wherein an overetch is performed during said etching to remove any mask defects in said phase shifting layer;
• and
• removing said resist layer to complete said phase shifting mask in the manufacture of said integrated circuit device.

A method of fabricating a phase shifting mask for use in the manufacture of an integrated circuit device comprising:

• providing a transparent substrate comprising quartz;
• depositing a transparent etch stop layer overlying said transparent substrate;
• depositing a phase shifting layer overlying said transparent etch stop layer;
• depositing an opaque layer overlying said phase shifting layer;
• depositing a resist layer overlying said opaque layer;
• patterning said resist layer;
• etching said opaque layer and said phase shifting layer wherein said resist layer masks said etching, wherein said opaque layer is etched through, wherein said transparent etch stop layer prevents etching into said transparent substrate, wherein notches are etched into said phase shifting layer at the edges of said opaque layer, wherein said notches cause a phase shift in incident light relative to incident light passing through regions in said phase shifting layer adjacent to said notches, and wherein an overetch is performed during said etching to remove any mask defects in said phase shifting layer;
• and
• removing said resist layer to complete said phase shifting mask in the manufacture of said integrated circuit device.