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US 6,581,612 B1Granted
Chamber cleaning with fluorides of iodine
AssigneeApplied Materials, Inc.
InventorsPeter Loewenhardt, Shamouil Shamouilian, Pavel Ionov, Pamanabhan Krishnaraj
Life of this patent
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Abstract
A method of cleaning a semiconductor processing chamber uses as a cleaning gas precursor an iodine fluoride such as IF5 and IF7. Reactive species are generated from the precursor with help of plasma. These reactive species are further used to clean the processing chamber.
Claims9
A method of cleaning a processing chamber, the method comprising:
- providing a processing chamber adapted to perform a process by which a dielectric material accumulates on chamber components;
- generating via a plasma, a fluorine-containing reactive species from a precursor gas that includes a fluoride of iodine;
- and
- exposing the chamber components to the reactive species to clean the dielectric material from the chamber components.
1 more element
A method of cleaning a processing chamber, the method comprising:
- providing a processing chamber adapted to perform a process by which a metal accumulates on chamber components;
- generating via a plasma, a fluorine-containing reactive species from a precursor gas that includes a fluoride of iodine;
- and
- exposing the chamber components to the reactive species to clean the metal from the chamber components.
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A method of cleaning a processing chamber, the method comprising:
- providing a processing chamber adapted to perform a process by which at least one of tantalum nitride and titanium nitride accumulates on chamber components;
- generating via a plasma, a fluorine-containing reactive species from a precursor gas that includes a fluoride of iodine;
- and
- exposing the chamber components to the reactive species to clean the at least one of tantalum nitride and titanium nitride from the chamber components.
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Dependencies are inferred from the claim text.