Process window based optical proximity correction of lithographic images

A method of creating a pattern for a mask adapted for use in lithographic production of integrated circuits on a semiconductor substrate, the method comprising:

• providing a mask pattern of a feature to be created on the semiconductor substrate using the mask;
• determining simulated achievable dimensional bounds of the pattern;
• and
• modifying the mask pattern such that the resulting image of the mask pattern created on the semiconductor substrate falls within the simulated achievable dimensional bounds of the pattern.

A computer program product for creating a pattern for a mask adapted for use in lithographic production of integrated circuits on a semiconductor substrate, the mask pattern being of a feature to be created on the substrate using the mask, said computer program product having:

• computer readable program code means for establishing target dimensional bounds of the pattern;
• computer readable program code means for determining simulated achievable dimensional bounds of the pattern;
• computer readable program code means for comparing the target dimensional bounds of the pattern to the simulated achievable dimensional bounds of the pattern;
• and
• computer readable program code means for determining locations where the simulated achievable dimensional bounds of the pattern differ from the target dimensional bounds of the pattern.

A program storage device readable by a machine, tangibly embodying a program of instructions executable by the machine to perform method steps for creating a pattern for a mask adapted for use in lithographic production of integrated circuits on a semiconductor substrate, the mask pattern being of a feature to be created on the substrate using the mask, said method steps comprising:

• establishing target dimensional bounds of the pattern;
• determining simulated achievable dimensional bounds of the pattern;
• comparing the target dimensional bounds of the pattern to the simulated achievable dimensional bounds of the pattern;
• and
• determining locations where the simulated achievable dimensional bounds of the pattern differ from the target dimensional bounds of the pattern.