Critical dimension monitoring from latent image

A method for analyzing light reflected from a latent image exposed in a photo resist and for controlling a post exposure developing system, comprising:

• partitioning a wafer into one or more portions;
• exposing a pattern in the one or more portions, the exposing producing a latent image in the photo resist;
• directing a light onto the latent image;
• collecting a light reflected from the latent image;
• analyzing the reflected light to produce one or more signatures associated with the latent image;
• generating data used in connection with controlling the post exposure developing system based, at least in part, on the one or more signatures;
• and
• generating data operable to control a post exposure baking system based, at least in part, on the one or more signatures.

A method for regulating a post exposure developing process, comprising:

• partitioning a wafer into a plurality of grid blocks, the wafer having a photo resist layer deposited thereon;
• exposing one or more gratings on the photo resist layer, the gratings positioned within one or more of the plurality of grid blocks;
• directing a first light onto at least one of the one or more gratings;
• collecting a second light reflected from at least one of the one or more gratings, the second reflected light being a reflection of the first light;
• generating feedback information concerning the exposure, based, at least in part, on analyzing the second light;
• controlling an exposing system based, at least in part, on the feedback information;
• generating feed forward information concerning the exposure, based, at least in part, on analyzing the second light;
• controlling a post exposure developing process based, at least in part, on the feed forward information;
• and
• controlling a post exposure baking process based, at least in part, on the feed forward information.