Non-volatile memory device and method of manufacturing the same

Abstract

A non-volatile memory device includes gate insulating films formed on a semiconductor substrate and spaced apart from each other. A tunnel insulating film is formed on the semiconductor substrate and interposed between the adjacent gate insulating films. A memory transistor gate is formed on the tunnel insulating film and the gate insulating film interposing the tunnel insulating film therebetween. A select transistor gate is formed on the gate insulating film spaced apart from the memory transistor gate. A first doped region is formed in a portion of the semiconductor substrate under the memory transistor gate and extending to overlap one end of the select transistor gate. A second doped region is formed in a portion of the semiconductor substrate spaced apart from the first doped region and overlapping one end of the memory transistor opposite to the select transistor gate. A third doped region is formed in a portion of the semiconductor substrate spaced apart from the first doped region and overlapping the other end of the select transistor gate. The second doped region has a low-density doped region and a high-density doped region and is shallower in depth than the first and third doped regions.

Dependencies are inferred from the claim text.