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US 6,555,866 B1Granted
Non-volatile memory and fabrication thereof
AssigneeMacronix International Co., Ltd.
InventorTung-Cheng Kuo
Life of this patent
Estimating the term…
Abstract
A non-volatile memory and the fabrication thereof are described. The non-volatile memory comprises a substrate having a trench therein, a buried bit-line in the substrate crossing the trench, a word-line covering at least the trench and crossing over the buried bit-line, and a charge trapping layer between the substrate and the word-line.
Claims12
A non-volatile memory, comprising:
- a substrate having a trench therein;
- a buried bit-line in the substrate crossing the trench;
- a word-line covering at least the trench and crossing over the buried bit-line;
- and
- a charge trapping layer between the substrate and the word-line.
2 more elements
A method for fabricating a non-volatile memory, comprising the steps of:
- providing a substrate;
- forming a trench in the substrate;
- forming a charge trapping layer on the substrate and on the trench;
- exposing a strip region of the substrate that crosses the trench;
- forming a buried bit-line in the substrate within the strip region;
- forming a buried bit-line oxide layer on the buried bit-line;
- and
- forming a word-line over the substrate, the word line covering the trench and crossing over the buried bit-line.
5 more elements
Dependencies are inferred from the claim text.