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AssigneeKoninklijke Philips Electronics N.V.
InventorAlbertus Theodorus Maria Van De Goor
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Method of making a semiconductor device, in which method a first layer of silicon oxide (10) is deposited on a surface (2) of a silicon body (1), which layer is then provided with contact windows (11) within which semiconductor zones (5) formed in body and conductor tracks (6) of non-crystalline silicon formed on the surface are exposed. On the first layer of silicon oxide a first metallization layer is formed, comprising conductor tracks (16) which are in contact with the semiconductor zones (5) and conductor tracks (6) within the contact windows (11). The first metallization is then covered with a second layer of silicon oxide (17) which is provided with contact windows (19) within which the conductor tracks (16) of the first metallization are exposed. Then, successively, an adhesion layer (20) is deposited, the contact windows (19) are filled with tungsten plugs (22), and a second metallization layer is formed comprising conductor tracks in contact with the tungsten plugs. The conductor tracks (16) of the first metallization layer are formed in a tungsten layer, and a layer consisting only of titanium nitride deposited as the adhesion layer (20). Due to said choice of material, the connections between the conductor tracks of the first and the second metallization layer only show small mutual differences in contact resistance.
A method of manufacturing a semiconductor device where a first layer of silicon oxide is deposite on a surface of a silicon body and is provided with contact windows within which semiconductor zones formed in the semiconductor body and conductor tracks of non-crystalline silicon formed on the surface are exposed, while on said first layer of silicon oxide a first metallization layer is formed which makes contact in the contact windows with the active semiconductor zones and with the conductor tracks of non-crystalline silicon and which is covered with a second layer of silicon oxide which is provided with contact windows within which the first metallization layer is exposed, whereupon consecutively an adhesion layer is deposited on the second layer of silicon oxide and in the contact windows formed therein, the contact windows are filled with tungsten plugs, and a second metallization layer is formed on the layer of insulating material so as to make contact with the tungsten plugs formed in the contact windows, wherein the first metallization layer is formed in a tungsten layer, while a layer of titanium nitride is deposited as the adhesion layer on the second layer of silicon oxide and in the contact windows formed therein.
A method of manufacturing a semiconductor device comprising the steps of:
Dependencies are inferred from the claim text.