Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device

A method of manufacturing a semiconductor device including a semiconductor substrate and a plurality of memory cells each having a capacitor formed with said semiconductor substrate, comprising the steps of:

• forming a plurality of holes in an insulating material formed over said semiconductor substrate;
• forming a film of a first conductive material on said insulating film and on an inner surface and a bottom surface of each of said holes by chemical vapor deposition;
• removing the film of said first conductive material from said insulating film, and leaving the film of said first conductive material on the inner surface and the bottom surface of said holes as a seed film;
• burying said holes in said insulating film by the same material as said first conductive material by chemical vapor deposition by utilizing said seed film on the inner surface and the bottom surface of said holes, under a condition wherein deposition selectability is established to be large on said first conductive material, to be small on said insulating film;
• removing said insulating film to expose said first conductive material buried, and forming a plurality of first electrodes isolated from one another;
• forming a dielectric film on said first electrodes at a predetermined temperature, said first conductive material being Ru, Pt or Ir that does not lose conduction even when exposed to said predetermined temperature for forming said dielectric film;
• and
• forming a film of a second conductive material to serve as a second electrodes on said dielectric film;
• said first and second electrodes and said dielectric film together constituting said capacitors.

A method of manufacturing a semiconductor device including a semiconductor substrate and a plurality of memory cells each having a capacitor formed with said semiconductor substrate, comprising the steps of:

• forming a deposition preventing film in an insulating film formed over said semiconductor substrate;
• forming a plurality of holed in said insulating film in such a manner as to penetrate through said deposition preventing film;
• forming a film of a first conductive material on an inner surface and a bottom surface of each of said holes by chemical vapor deposition by utilizing said deposition preventing film, under a condition wherein deposition selectability is established to be large on said insulating film, to be small on said deposition preventing film;
• burying said holes in said insulating film by chemical vapor deposition by the same material as said first conductive material by utilizing a seed film on the inner surface and the bottom surface of said holes, under a condition wherein deposition selectability is established to be large on said first conductive material, to be small on said deposition preventing film;
• removing said insulating film to expose said first conductor martial buried, and forming a plurality of first electrodes isolated from one another;
• forming a dielectric film on said first electrodes at a predetermined temperature, a material of said first electrode being Ru, Pt or Ir that does not lose conduction even when exposed to said predetermined temperature for forming said dielectric film;
• and
• forming a film of a second conductive material to serve as second electrodes on said dielectric film;
• said first and second electrodes and said dielectric film together constituting said capacitors.