Resist pattern forming method using anti-reflective layer, resist pattern formed, and method of etching using resist pattern and product formed

A method of manufacturing a semiconductor device, comprising:

• forming a transparent film, transparent to an exposure light, on a semiconductor substrate whose surface has steps;
• making a surface of the transparent film planar;
• forming an inorganic film as an anti-reflective film element on the transparent film;
• forming an organic film on the inorganic film;
• forming a resist film on the organic film;
• exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device;
• and
• developing the exposed resist film,
• wherein the inorganic film has a greater extinction coefficient for the exposure light than that of the organic film.

A method of manufacturing a semiconductor device, comprising:

• forming a transparent film, transparent to an exposure light, on a semiconductor substrate whose surface has steps;
• polishing the surface of the transparent film by chemical mechanical polishing;
• forming an inorganic film as an anti-reflective film element on the transparent film;
• forming an organic film on the inorganic film;
• forming a resist film on the organic film;
• exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device;
• and
• developing the exposed resist film,
• wherein the inorganic film has a greater extinction coefficient for the exposure light than that of the organic film.

A method of manufacturing a semiconductor device, comprising:

• forming a transparent film, transparent to an exposure light, on a semiconductor substrate;
• forming an inorganic film as an anti-reflective film element on the transparent film;
• forming an organic film on the inorganic film;
• forming a chemically amplified resist film on the organic film;
• exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device;
• and
• developing the exposed resist film,
• within the inorganic film has a greater extinction coefficient for the exposure light than that of the organic film.

A method of manufacturing a semiconductor device, comprising:

• forming a transparent film, transparent to an exposure light, on a semiconductor substrate;
• forming an inorganic film as an anti-reflective film element on the transparent film;
• forming an organic film on the inorganic film;
• forming a resist film on the organic film;
• exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device;
• and
• developing the exposed resist film,
• wherein the inorganic film absorbs the exposure light.

A method of manufacturing a semiconductor device, comprising:

• forming a spin-on-glass film on a semiconductor substrate;
• forming an inorganic film as an anti-reflective film element on the spin-on-glass film;
• forming an organic film on the inorganic film;
• forming a resist film on the organic film;
• exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device;
• and
• developing the exposed resist film,
• wherein the inorganic film has a greater extinction coefficient for the exposure light than that of the organic film.

A method of manufacturing a semiconductor device, comprising:

• providing a semiconductor substrate which has a metal film;
• forming a transparent film, transparent to an exposure light, on the semiconductor substrate;
• forming an inorganic film as an anti-reflective film element on the transparent film;
• forming an organic film on the inorganic film;
• forming a resist film on the organic film;
• exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device;
• and
• developing the exposed resist film,
• wherein the inorganic film has a greater extinction coefficient for the exposure light than that of the organic film.

A method of manufacturing a semiconductor device, comprising:

• preparing a semiconductor substrate;
• forming a transparent film on the semiconductor substrate, the transparent film being transparent to exposure light;
• forming an inorganic film as an anti-reflective film element on the transparent film;
• forming an organic film on the inorganic film;
• forming a resist film on the organic film;
• detecting a pattern for alignment through the inorganic film by using a detection beam;
• exposing a pattern onto the resist film, so as to form an exposed resist film;
• and
• developing the exposed resist film to form a resist pattern,
• wherein the inorganic film has a greater extinction coefficient for the exposure light than that of the organic film.

A method of manufacturing a semiconductor device, comprising:

• providing a body which has a transparent film, transparent to an exposure light, and an anti-reflective film;
• forming a resist film over the body;
• exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device;
• and
• developing the exposed resist film,
• wherein the anti-reflective film absorbs the exposure light and the resist film contacts with a bonding layer.

A method of manufacturing a semiconductor device, comprising:

• providing a body which has a transparent film, transparent to an exposure light, and an anti-reflective film;
• forming a resist film over the body;
• detecting a pattern for alignment through the anti-reflective film by using a detection beam;
• exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device;
• and
• developing the exposed resist film,
• wherein the anti-reflective film absorbs the exposure light and the resist film contacts with a bonding layer.