Method and apparatus for etching a gold metal layer using a titanium hardmask
AssigneeLam Research Corporation
InventorsGladys So-Wan Lo, David W. Mytton, Greg Goldspring
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Abstract
Disclosed is an inventive method for etching a gold metallization in a plasma processing chamber. The method includes introducing a substrate having a gold layer and an overlying titanium hardmask layer into the plasma processing chamber. The hardmask is first etched using conventional etching techniques. Then a plasma is formed in the chamber from an oxidizing gas and an etching gas. The etching gas is preferably a hydrochloric acid containing gas which may contain a chlorine containing gas. In addition, N2 may be provided. The plasma is then used to etch the gold layer through the titanium hardmask.
Claims7
An etch system for gold layers, comprising:
- a chamber having a substrate disposed therein, the substrate being provided with a gold layer to be etched and an overlying hardmask having an aperture, wherein said hardmask contains titanium;
- a gas inlet mechanism connecting an oxidizing gas and an etching gas source to said chamber, said etching gas source containing a gas comprising hydrochloric acid;
- at least one electrode disposed within said chamber;
- and
- an RF generator coupled to said at least one electrode, whereby a plasma is formed with said oxidizing gas and said etching gas which etches exposed portions of said gold layer through said hardmask.
Dependencies are inferred from the claim text.