Passivation of copper in dual damascene metalization
AssigneeNovellus Systems, Inc.
InventorsRobert T. Rozbicki, Ronald Allan Powell, Erich Klawuhn, Michal Danek, Karl B. Levy, Jonathan David Reid, Mukul Khosla, Eliot K. Broadbent
Life of this patent
Estimating the term…
Abstract
The present invention pertains to systems and methods for passivating the copper seed layer deposited in Damascene integrated circuit manufacturing. More specifically, the invention pertains to systems and methods for depositing the copper seed layer by physical vapor deposition, while passivating the copper during or immediately after the deposition in order to prevent excessive oxidation of the copper. The invention is applicable to dual Damascene processing.
Claims27
A method of passivating a copper seed layer on an integrated circuit surface substrate, the method comprising:
- physical vapor deposition of copper onto the substrate surface to form the copper seed layer;
- incorporating nitrogen into the copper seed layer, so that a passivating layer is formed on the surface of the copper seed layer;
- and
- depositing a second copper layer over the copper seed layer, wherein the method further provides for controlled oxidation of the copper seed layer so that a layer of copper oxide is formed.
A method of passivating a copper seed layer on an integrated circuit surface substrate, the method comprising:
- physical vapor deposition of copper onto the substrate surface to form the copper seed layer;
- incorporating hydrogen into the copper seed layer, so that a passivating layer is formed on the surface of the copper seed layer;
- and
- depositing a second copper layer over the copper seed layer, wherein the method further provides for controlled oxidation of the copper seed layer so that a layer of copper oxide is formed.
A method of passivating a copper seed layer on an integrated circuit surface substrate, the method comprising:
- physical vapor deposition of copper onto the substrate surface to form the copper seed layer;
- incorporating a passivating agent into the copper seed layer, so that a passivating layer is formed on the surface of the copper seed layer, wherein the passivating agent is selected from a group consisting of:
- F2, CF4, Cl2, SiH4 and Ge;
- and
- depositing a second copper layer over the copper seed layer, wherein the method further provides for controlled oxidation of the copper seed layer so that a layer of copper oxide is formed.
Dependencies are inferred from the claim text.