Method and apparatus for the grounding of process wafers by the use of conductive regions created by ion implantation into the surface of an electrostatic clamp

An ion implantation workpiece support system, comprising:

• a workpiece support component;
• and
• an electrostatic clamp associated with the workpiece support component, and operable to secure a workpiece to the workpiece support component via an electrostatic force, wherein the electrostatic clamp comprises:
• an electrode operable to receive a voltage potential applied thereto;
• an electrically insulative material overlying the electrode and having a surface opposite the electrode for supporting a workpiece thereon;
• and
• an electrically conductive region embedded in the electrically insulating material and generally coplanar with the surface for supporting the workpiece, wherein the electrically conductive region is coupled to a circuit ground potential and operable to bleed off charge which accumulates on the workpiece during implantation thereof.

A method of forming an electrostatic clamp, comprising the steps of:

• forming an electrically insulating layer over an electrode;
• and
• doping a portion of the electrically insulating layer, wherein the doped portion of the electrically insulating layer becomes electrically conductive, wherein doping the portion of the electrically insulating layer comprises:
• depositing a photoresist layer over the electrically insulating material;
• selectively exposing the photoresist layer;
• developing the selectively exposed photoresist layer, thereby removing a portion thereof corresponding to the portion of the electrically insulating layer to be doped;
• and
• bombarding the exposed portion of the electrically insulating layer with a dopant material.