Communication module having a structure for reducing crosstalk
AssigneeHitachi, Ltd.
InventorsKiyoshi Hayashi, Takashi Harada, Satoshi Ueno
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AssigneeHitachi, Ltd.
InventorsKiyoshi Hayashi, Takashi Harada, Satoshi Ueno
Estimating the term…
Disclosed herein is a communication module, comprising a semiconductor chip in which channels for allowing signal converting means to convert current signals inputted from input terminals to voltage signals and outputting the same from output terminals respectively are arranged in parallel in plural form, and wherein the semiconductor chip is comprised principally of a semiconductor substrate in which a second semiconductor layer is provided on a first semiconductor layer with an insulating layer interposed therebetween, each of the signal converting means is formed in a channel forming region of the second semiconductor layer, which is defined for each channel, and the input and output terminals are formed on the channel forming regions of the second semiconductor layer with the insulating layer interposed therebetween. In the communication module, the first semiconductor layer is formed with resistivity smaller than that of the second semiconductor layer and fixed to a fixed potential, whereby the amount of transfer of noise power developed through the substrate can be lessened and crosstalk developed between adjacent channels can be reduced.
A communication module, comprising:
A communication module, comprising:
A communication module, comprising:
A communication module, comprising:
Dependencies are inferred from the claim text.