Charge pump device formed on silicon-on-insulator and operation method

A charge pump formed in a silicon-on-insulator (SOI) substrate comprising:

• a substrate;
• an insulator formed on said substrate;
• a semiconductor layer formed on said insulator;
• a first n-body formed in said semiconductor layer;
• a second n-body formed in said semiconductor layer
• a p+ region formed in said semiconductor layer extending down to said insulator, said p+ region separating said first n-body and said second n-body;
• and
• a gate structure formed atop a portion of said first n-body and only a portion of said p+ region, said gate structure over said first n-body and said p+ region forming a switch, said p+ region and said first n-body forming a first diode, said p+ region and said second n-body forming a second diode, said gate structure formed from a thin gate oxide layer underneath a conductive layer.

A method for operating a charge pump formed on a silicon-on-insulator (SOI) substrate, said charge pump comprising:

• a substrate;
• an insulator formed on said substrate;
• a semiconductor layer formed on said insulator;
• a first p-body formed in said semiconductor layer;
• a second p-body formed in said semiconductor layer;
• a n+ region formed in said semiconductor layer extending down to said insulator, said n+ region separating said first p-body and said second p-body;
• and
• a gate structure formed atop a portion of said first p-body and only a portion of said n+ region, said gate structure over said first p-body and said n+ region forming a switch, said n+ region and said first p-body forming a first diode, said n+ region and said second p-body forming a second diode, said gate structure formed from a thin gate oxide layer underneath a conductive layer;
• said method comprising:
• applying an input signal to said second p-body;
• applying a clock signal to said gate structure;
• and
• obtaining an output signal at said first p-body, said output signal a result of the generation of a gate induced drain leakage (GIDL) current operating on said charge pump.

A method for operating a charge pump formed on a silicon-on-insulator (SOI) substrate, said charge pump comprising:

• a substrate;
• an insulator formed on said substrate;
• a semiconductor layer formed on said insulator;
• a first p-body formed in said semiconductor layer;
• a second p-body formed in said semiconductor layer;
• a n+ region formed in said semiconductor layer extending down to said insulator, said n+ region separating said first p-body and said second p-body;
• a gate structure formed atop a portion of said first p-body and only a portion of said n+ region, said gate structure over said first p-body and said n+ region forming a half transistor, said gate structure formed from a thin gate oxide layer underneath a conductive layer;
• a second n+ region formed in said semiconductor layer and extending down to said insulator, said second n+ region being positioned so that said first p-body is between said n+ region and said second n+ region;
• a third p-body formed in said semiconductor layer and extending down to said insulator, said third p-body being positioned so that said second n+ region is between said first p-body and said third p-body;
• and
• a second gate structure formed atop a portion of said third p-body and a portion of said second n+ region, said gate structure formed from a second thin gate oxide layer underneath a second conductive layer;
• said method comprising:
• applying an input signal to said second p-body;
• applying a first clock signal to said gate structure;
• applying a second clock signal to said second gate structure;
• and
• obtaining an output signal at said third p-body, said output signal a result of the generation of a gate induced drain leakage (GIDL) current operating on said charge pump.