Higher thermal conductivity glass for SOI heat removal

A silicon-on-insulator substrate, comprising:

• a silicon substrate layer;
• a beryllium oxide layer over the silicon substrate layer;
• a silicon dioxide layer over the beryllium oxide layer, the silicon dioxide layer having a thickness from 2,000 Å to about 5,000 Å;
• and
• a silicon device layer comprising silicon over the silicon dioxide layer, the device layer having a thickness from about 500 Å to about 5,000 Å,
• the beryllium oxide layer having a thickness from about 1,600 Å to about 2,750 Å.

A method of forming a silicon-on-insulator substrate, comprising:

• providing a first silicon substrate;
• forming a beryllium oxide layer over the first silicon substrate, the beryllium oxide layer having a thickness from about 1,600 Å to about 2,750 Å;
• forming a first insulation layer over the beryllium oxide layer to provide a first structure;
• providing a second structure comprising a second silicon layer and a second insulation layer;
• bonding the first structure and the second structure together so that the first insulation layer is adjacent the second insulation layer;
• and
• removing a portion of the second silicon layer to provide a silicon device layer comprising silicon having a thickness from about 500 Å to about 5,000 Å thereby providing the silicon-on-insulator substrate.