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US 6,552,385 B2Granted
DRAM memory capacitor having three-layer dielectric, and method for its production
AssigneeInfineon Technologies AG
InventorsGerhard Beitel, Martin Franosch, Thomas Peter Haneder, Gerrit Lange, Hans Reisinger, Herbert Schäfer, Stephan Schlamminger, Hermann Wendt
Life of this patent
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Abstract
A DRAM capacitor is described that contains a BaSrTiO3 (BST) dielectric. The dielectric has a three-layer structure enabling the formation of a potential trough in which electrons can be permanently trapped.
Claims6
A dynamic random access memory (DRAM) capacitor, comprising:
- two electrodes;
- and
- a dielectric containing BzSrTiO3 (BST) and disposed between said two electrodes, said dielectric formed of three layers with a middle layer functioning as a potential well for trapping electrons, said three layers including two outer layer composed of BaSrTiO3 and said middle layer composed of SrTiO3.
Dependencies are inferred from the claim text.