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US 6,552,383 B2Granted
Integrated decoupling capacitors
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
Estimating the term…
Abstract
A method for fabricating buried decoupling capacitors in an integrated circuit is disclosed. The method forms decoupling capacitors by creating an opening within a substrate which has fin-like spacers, depositing a dielectric material over the spacers, depositing an electrode material over the dielectric material, depositing an insulative material over the electrode material, and forming integrated circuit components over the insulative material.
Claims66
An integrated circuit comprising:
- a doped semiconductor substrate having an opening therein containing fin-like spacers formed of a doped semiconductor material;
- a dielectric material formed over said spacers;
- an electrode material formed over said dielectric material;
- and
- an insulating material formed over said electrode material.
2 more elements
A computer system comprising:
- a processor;
- and
- a memory device coupled to said processor, at least one of said processor and memory device containing a capacitor comprising:
- a substrate having an opening therein containing fin-like spacers formed of a doped semi-conductor material, a dielectric material formed over said spacers, and an electrode material formed over said dielectric material.
1 more element
A capacitor structure comprising:
- a doped semiconductor substrate having a circular opening therein;
- doped semiconductor microstructures formed in a fan-like pattern about a center of said circular opening;
- a dielectric material over said microstructures;
- and
- an electrode material over said dielectric material.
2 more elements
Dependencies are inferred from the claim text.