Trench capacitors in SOI substrates
AssigneeAgere Systems Inc.
InventorsSailesh Chittipeddi, Charles Walter Pearce, Pradip Kumar Roy
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Abstract
A trench capacitor formed on an SOI substrate extends through an upper silicon layer and an insulating layer and into a semiconductor base substrate. The outer electrode of the trench capacitor includes portions of the semiconductor base substrate which bound the trench in which the trench capacitor is formed. The outer electrode is coupled to a contact structure formed in close proximity to the trench capacitor, and which extends through the insulating layer. The method for simultaneously producing the trench capacitor and contact structure includes forming two trench openings, forming a dielectric liner on one of the trench openings, then filling each of the trench openings with a semiconductor material.
Claims15
A semiconductor device comprising a trench capacitor formed on a silicon-on-insulator substrate, said silicon-on-insulator substrate including a silicon layer formed over an insulating layer formed over a semiconductor base substrate and including an upper surface being a top surface of said silicon layer, and said trench capacitor formed of a trench beginning at said upper surface and extending downward therefrom and through said silicon layer and said insulating layer and into said semiconductor base substrate, said trench capacitor including an oxide liner formed directly on and contacting sidewalls and a bottom surface of said trench, and a polysilicon plug formed within said trench and directly contacting said oxide liner.
A semiconductor device comprising a trench capacitor formed on a silicon-on-insulator substrate, said silicon-on-insulator substrate including an undoped silicon layer formed over an insulating layer formed over a semiconductor base substrate, and said trench capacitor extending through said undoped silicon layer and said insulating layer and into said semiconductor base substrate.
Dependencies are inferred from the claim text.