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US 6,552,370 B2Granted
Network of triacs with gates referenced with respect to a common opposite face electrode
OwnerRobert Pezzaniinventor
Life of this patent
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Abstract
The present invention relates to a triac network wherein each triac includes an N-type semiconductor substrate, containing a first thyristor comprised of NPNP regions and a second thyristor comprised of PNPN regions, and surrounded with a P-type deep diffusion. A P-type well contains an N-type region, on the front surface side. A first metallization corresponds to a first main electrode, a second metallization corresponds to a second main electrode, a third metallization covers the N-type region and is connected to a gate terminal, and a fourth metallization connects the P-type well to the upper surface of the deep diffusion.
Claims27
A bidirectional switch including:
- a semiconductor substrate of a first type of conductivity having a front surface side and a rear surface side;
- a layer of a second type of conductivity on the rear surface side;
- a deep diffusion of the second type of conductivity connecting the layer to the front surface side;
- a first well of the second type of conductivity on the front surface side, the first well containing a first region of the first type of conductivity;
- a second well of the second type of conductivity on the front surface side;
- second region of the first type of conductivity on the rear surface side, the second region substantially facing the second well;
- a third well of the second type of conductivity on the front surface side, the third well containing a third region of the first type of conductivity;
- a first metallization on the rear surface side corresponding to a first main electrode;
- a second metallization on the front surface side covering an upper surface of the first region and an upper surface of the second well, and corresponding to a second main electrode;
- a third metallization covering one of the third well and the third region, the third metallization being connected to a gate terminal;
- and
- a fourth metallization connecting the other one of the third well and the third region that is not covered by the third metallization to an upper surface of deep diffusion.
9 more elements
A bidirectional switch implemented in a semiconductor substrate having a front surface and rear surface, comprising:
- a first terminal disposed on the rear surface of the semiconductor substrate;
- a second terminal disposed on the front surface of the semiconductor substrate;
- and
- a control terminal disposed on the front surface of the semiconductor substrate;
- wherein, when the first terminal is electrically coupled to a first voltage, the second terminal is electrically coupled to a second voltage, and a control voltage is applied to the control terminal, the bidirectional switch conducts current between the first terminal and the second terminal based upon a value of the control voltage relative to a value of the first voltage and independently of a value of the second voltage.
2 more elements
A bidirectional switch implemented in a semiconductor substrate having a front surface and rear surface, comprising:
- a first terminal disposed on the rear surface of the semiconductor substrate;
- a second terminal disposed on the front surface of the semiconductor substrate;
- and
- a control terminal disposed on the front surface of the semiconductor substrate;
- wherein, when the first terminal is electrically coupled to a first voltage, the second terminal is electrically coupled to a second voltage, and a control voltage is applied to the control terminal, the bidirectional switch conducts current between the first terminal and the second terminal based upon a value of the control voltage having a first polarity relative to the first voltage when the first voltage is greater than the second voltage and when the first voltage is less than the second voltage.
2 more elements
A plurality of bidirectional switches, each of the plurality of bidirectional switches comprising:
- a semiconductor substrate having a front surface and a rear surface;
- a first terminal disposed on the rear surface of the semiconductor substrate;
- a second terminal disposed on the front surface of the semiconductor substrate;
- and
- a control terminal disposed on the front surface of the semiconductor substrate;
- wherein, when the first terminal of a respective bidirectional switch is electrically coupled to a first voltage, the second terminal of a respective bidirectional switch is electrically coupled to a second voltage, and a control voltage is applied to the control terminal of a respective bidirectional switch, each respective bidirectional switch conducts current between the first terminal and the second terminal based upon a value of the control voltage relative to a value of the first voltage and independently of a value of the second voltage.
3 more elements
A plurality of bidirectional switches, each of the plurality of bidirectional switches comprising:
- a semiconductor substrate of a first type of conductivity having a front surface side and a rear surface side;
- a layer of a second type of conductivity on the rear surface side;
- a deep diffusion of the second type of conductivity connecting the layer to the front surface side;
- a first well of the second type of conductivity on the front surface side, the first well containing a first region of the first type of conductivity;
- a second well of the second type of conductivity on the front surface side;
- second region of the first type of conductivity on the rear surface side, the second region substantially facing the second well;
- a third well of the second type of conductivity on the front surface side, the third well containing a third region of the first type of conductivity;
- a first metallization on the rear surface side corresponding to a first main electrode;
- a second metallization on the front surface side covering an upper surface of the first region and an upper surface of the second well, and corresponding to a second main electrode;
- a third metallization covering one of the third well and the third region, the third metallization being connected to a gate terminal;
- and
- a fourth metallization connecting the other one of the third well and the third region that is not covered by the third metallization to an upper surface of the deep diffusion.
9 more elements
Dependencies are inferred from the claim text.