Method of forming a high quality gate oxide at low temperatures
AssigneeSharp Laboratories of America, Inc.
InventorsYoshi Ono, Jong-Jan Lee
Life of this patent
Estimating the term…
Abstract
A method of low-temperature oxidation of a silicon substrate includes placing a silicon wafer in a vacuum chamber; maintaining the silicon wafer at a temperature of between about room temperature and 350° C.; introducing an oxidation gas in the vacuum chamber including introducing an oxidation gas taken from the group of oxidation gases consisting of O2 and O3; dissociating the oxidation gas into radical oxygen with a xenon laser generating light at a wavelength of about 172 nm and flowing the radical oxygen over the silicon wafer; and forming an oxide layer on at least a portion of the silicon wafer.
Claims13
A method of low-temperature oxidation of a silicon substrate comprising:
- placing a silicon wafer in a vacuum chamber;
- maintaining the silicon wafer at a temperature of between about room temperature and 350° C.;
- introducing an oxidation gas in the vacuum chamber;
- dissociating the oxidation gas into radical oxygen with a xenon laser generating light at a wavelength of about 172 nm and flowing the radical oxygen ovcr the silicon wafer while applying a negative potential of between about five to ten volts to the silicon wafer;
- and
- forming an oxide layer on at least a portion of the silicon wafer.
A method of low-temperature oxidation of a silicon substrate comprising:
- placing a silicon wafer in a vacuum chamber;
- maintaining the silicon wafer at a temperature of between about room temperature and 350° C.;
- introducing an oxidation gas in the vacuum chamber including introducing an oxidation gas taken from the group of oxidation gases consisting of O2 and O3;
- dissociating the oxidation gas into radical oxygen with a xenon laser generating light at a wavelength of about 172 nm and flowing the radical oxygen over the silicon wafer while applying a negative potential of between about five to ten volts to the silicon wafer;
- and
- forming an oxide layer on at least a portion of the silicon wafer.
A method of low-temperature oxidation of a silicon substrate comprising:
- placing a silicon wafer in a vacuum chamber;
- maintaining the silicon wafer at a temperature of between about room temperature and 350° C.;
- introducing an oxidation gas in the vacuum chamber;
- dissociating the oxidation gas into radical oxygen with a xenon laser generating light at a wavelength of about 172 nm and flowing the radical oxygen over the silicon wafer, and applying a negative potential of between about five to ten volts to the silicon wafer;
- forming an oxide layer on at least a portion of the silicon wafer;
- and
- annealing the silicon wafer and oxide layer in an inert atmosphere for between about one to ten minutes at a temperature of between about 600° C. to 750° C.
Dependencies are inferred from the claim text.