CoSix process to improve junction leakage
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsDian-Hau Chen, Kwang-Ming Lin, Yu-Ku Lin, Tong-Hua Kuan, Jin-Kuen Lan
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Abstract
A cobalt silicide process having a titanium-rich/titanium nitride capping layer to improve junction leakage is described. Semiconductor device structures to be silicided are formed in and on a semiconductor substrate. A cobalt layer is deposited overlying the semiconductor device structures. A titanium-rich/titanium nitride capping layer is deposited overlying the cobalt layer. Thereafter, a cobalt silicide layer is formed on the semiconductor device structures. The titanium-rich/titanium nitride capping layer and an unreacted portion of the cobalt layer are removed to complete fabrication of the integrated circuit device.
Claims24
A method of fabricating an integrated circuit device comprising:
- providing device structures to be silicided in and on a substrate;
- depositing a cobalt layer overlying said device structures;
- depositing a composite titanium-rich titanium nitride/titanium nitride capping layer overlying said cobalt layer;
- thereafter forming a cobalt silicide layer on said device structures;
- and
- thereafter removing said composite titanium-rich titanium nitride/titanium nitride capping layer and an unreacted portion of said cobalt layer to complete fabrication of said integrated circuit device.
A method of fabricating an integrated circuit device comprising:
- providing device structures to be silicided in and on a substrate;
- depositing a cobalt layer overlying said device structures;
- depositing a titanium-rich titanium nitride layer overlying said cobalt layer;
- depositing a titanium nitride layer overlying said titanium-rich titanium nitride layer;
- thereafter forming a cobalt silicide layer on said device structures;
- and
- thereafter removing said titanium-rich titanium nitride layer, said titanium nitride layer and an unreacted portion of said cobalt layer to complete fabrication of said integrated circuit device.
A method of fabricating an integrated circuit device comprising:
- providing device structures to be silicided in and on a substrate;
- depositing a cobalt layer overlying said device structures;
- depositing a titanium-rich titanium nitride layer overlying said cobalt layer wherein said titanium-rich titanium nitride layer has a thickness of no more than 50 Angstroms and wherein said depositing comprises sputtering a titanium source with an argon gas for 3 to 5 seconds and thereafter sputtering said titanium source with said argon gas in conjunction with a nitrogen gas flow for about 10 seconds to form said titanium-rich titanium nitride layer;
- depositing a titanium nitride layer overlying said titanium-rich titanium nitride layer;
- thereafter forming a cobalt silicide layer on said device structures;
- and
- thereafter removing said titanium-rich titanium nitride layer, said titanium nitride layer and an unreacted portion of said cobalt layer to complete fabrication of said integrated circuit device.
Dependencies are inferred from the claim text.