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US 6,551,911 B1Granted
Method for producing Schottky diodes and Schottky diodes
AssigneeInfineon Technologies AG
InventorsReinhard Losehand, Hubert Werthmann
Life of this patent
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Abstract
A method for producing Schottky diodes having a protective ring in an edge region of a Schottky contact. The protective ring is produced by a protective ring material that is deposited onto a surface of a semiconductor layer, which surface is provided with a patterned masking layer beforehand, and the protective ring material subsequently being siliconized. In this case, the protective ring material constitutes a metal, in particular a high barrier metal, which has, in particular, platinum.
Claims15
A method for producing Schottky diodes, which comprises:
- providing a semiconductor layer having a surface for forming a Schottky contact having an edge region;
- depositing a patterned masking layer onto the surface of the semiconductor layer;
- depositing a protective ring material onto the surface of the semiconductor layer;
- and
- siliconizing, subsequently, the protective ring material to form a protective ring in the edge region of the Schotty contact.
2 more elements
A Schottky diode, comprising:
- a semiconductor layer having a surface for forming a Schottky contact having an edge region;
- a patterned masking layer having a mask edge region and disposed on said surface of said semiconductor layer;
- and
- a protective ring formed of a siliconized protective ring material and disposed at said mask edge region of said patterned masking layer.
1 more element
Dependencies are inferred from the claim text.