Lateral PNP and method of manufacture

A method for manufacturing a lateral PNP comprising:

• providing a substrate layer of a first conductivity type;
• forming a collector region of a first conductivity using a p epitaxial layer,
• forming a buried layer of a second conductivity type between the substrate layer and the collector region;
• forming an n-well;
• forming a graded channel base region using a lightly doped implant such that the base region contacts the buried layer, n-well and a base contact;
• and
• forming an emitter contact and a collector contact.

A lateral PNP produced by:

• providing a substrate layer of a first conductivity type;
• forming a lightly doped collector region of a first conductivity using a p epitaxial layer;
• forming a buried layer of a second conductivity type between the substrate layer and the collector region;
• forming an n-well;
• forming a graded channel base region using a lightly doped implant such that the base region contacts the buried layer, the n-well and a base contact;
• and
• forming an emitter contact and a collector contact.