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US 6,551,852 B2Granted
Method of forming a recessed magnetic storage element
AssigneeMicron Technology, Inc.
InventorMark E. Tuttle
Life of this patent
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Abstract
A method of forming self-aligned recessed MRAM structures is disclosed. Recessed pinned and sense magnetic layers of an MRAM stack are formed in recessed digit lines formed in an insulating layer.
Claims29
A method of forming at least one MRAM structure on a first insulating layer of an integrated circuit, said method comprising the steps of:
- forming at least one first conductor in said first insulating layer;
- forming at least one recessed region in said at least one first conductor;
- forming at least one first recessed magnetic member in said at least one recessed region, said at least one first recessed magnetic member including at least one first recessed magnetic layer;
- and
- forming at least one second recessed magnetic member over said at least one first recessed magnetic member and in said at least one recessed region, said at least one second recessed magnetic member including at least one second recessed magnetic layer.
2 more elements
A method of forming a plurality of recessed MRAM structures on a first insulating layer of an integrated circuit, said method comprising the steps of:
- forming a plurality of recessed regions in a plurality of first conductive layers formed in said first insulating layer;
- forming a plurality of recessed pinned layers in said plurality of recessed regions;
- forming a plurality of recessed sense layers over said plurality of recessed pinned layers and in said plurality of recessed regions;
- and
- forming a plurality of second conductive layers over said plurality of recessed pinned layers and said plurality of recessed sense layers and oriented orthogonally to said plurality of first conductive layers.
2 more elements
Dependencies are inferred from the claim text.