Developer and method for forming resist pattern and photomask produced by use thereof
AssigneeFujitsu Limited
InventorsToshikatsu Minagawa, Eiichi Hoshino, Keiji Watanabe
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Abstract
A developer used for the formation of a resist pattern from a resist resin based on a halogenated alkylstyrene, wherein the developer is a mixture of a solvent regarded as a good solvent and a solvent regarded as a poor solvent for the resist resin based on a halogenated alkylstyrene. The developer is useful for the formation of photomasks, including various masks and reticles used to form various device patterns in a semiconductor product, a plasma display panel (PDP), a liquid crystal display (LCD) or the like. A method of forming a resist pattern using the developer is also disclosed. In addition, a photomask produced using the developer and the method is disclosed.
Claims10
A method for the formation of a resist pattern, the method comprising the steps of:
- forming a film of a resist resin based on a halogenated alkylstyrene copolymer on a substrate,
- patterning the resist film by electron beam exposure, and
- developing the patterned resist film by a developer which is a mixture of a solvent regarded as a good solvent and a solvent regarded as a poor solvent for the resist resin based on a halogenated alkylstyrene, wherein the weight ratio of good solvent to poor solvent in the mixture is from 7.5:2.5 to 8:2.
A photomask comprising a substrate and a light-screening film having a certain pattern formed thereon, wherein the pattern of the light-screening film is formed by patterning a film of a resist resin based on a halogenated alkylstyrene copolymer provided on the light-screening film by use of electron beam exposure of the resist film and a developer which is a mixture of a solvent regarded as a good solvent and a solvent regarded as a poor solvent for the resist resin, wherein the weight ratio of good solvent to poor solvent in the mixture is from 7.5:2.5 to 8:2.
Dependencies are inferred from the claim text.