Method for treating a silicon substrate, by nitriding, to form a thin insulating layer
AssigneeCommissariat a l'Energie Atomique
InventorsFrançois Martin, Daniel Bensahel, Caroline Hernandez, Laurent Vallier
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Abstract
Method for preparing a silicon substrate to form a thin electric insulating layer (24), characterized in that it comprises: a deoxidation step of at least one part of the silicon substrate (10), then a heat treatment step of the substrate at a temperature of 750° C. or less, the heat treatment being conducted in a NO-containing atmosphere at a pressure of 5.103 Pa (50 mBr) or less, in order to form a layer of silicon oxynitride (22) on the substrate. Use for the production of EPROM and DRAM memories.
Claims10
A method for treating a silicon substrate comprising:
- a deoxidation step of at least one part of the silicon substrate (10);
- then
- a heat treatment step of the substrate at a temperature of 750° C. or less, the heat treatment being conducted in a NO-containing atmosphere at a pressure of 5.1·103 Pa (50 mBar) or less, wherein said heat treatment step is applied for a sufficient length of time to obtain a layer of silicon oxynitride (22) having a thickness of between 0.5 and 1.5 nm, and
- a formation step wherein a layer of electric insulating material is formed on the layer of silicon oxynitride.
Substrate comprising, in order, a layer of silicon (10) with at least one area (12) devoid of native oxygen, a layer (22) of silicon oxynitride having a thickness of between 0.5 and 1.5 nm in contact with said area (12), and a layer of an electric insulating material having a thickness of between 2 and 5 nm, in contact with said layer of silicon oxynitride.
Dependencies are inferred from the claim text.