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AssigneeShin-Etsu Handotai Co., Ltd.
InventorsTakao Abe, Norihiro Kobayashi, Masahiro Kato
Estimating the term…
There is disclosed a heat treatment method for a silicon monocrystal wafer comprising the steps of heat-treating in a reducing atmosphere a silicon monocrystal wafer manufactured by growing a silicon monocrystal ingot by Czochralski method wherein a wafer obtained from a silicon monocrystal ingot having oxygen concentration of 16 ppma or less which is manufactured by pulling at a growth rate of 0.6 mm/min or more, and in which COPs exist in high density is subjected to anneal heat treatment at 1200° C. or above for one second or more through use of a rapid heating/rapid cooling apparatus, or at 1200° C. or above for 30 minutes or more through use of a batchwise heat treatment furnace, and no defect silicon monocrystal wafer obtained with the method. There can be manufactured a silicon monocrystal wafer in which crystal defects existing on the surface of the wafer or at the surface layer portion thereof are minimized, and there can be provided a silicon monocrystal wafer for a device which is excellent in electric characteristics such as oxide dielectric breakdown voltage and electrical reliability.
A heat treatment method for a silicon monocrystal wafer, comprising the steps of growing a silicon monocrystal ingot on a condition that COPs exist on a whole surface thereof while controlling a growth rate and oxygen concentration by Czochralski method, obtaining a silicon monocrystal wafer in which COPs exist in a density of 0.64 numbers/cm2 or more, manufactured by slicing the monocrystal ingot, and heat-treating in a reducing atmosphere the silicon monocrystal wafer in which COPs exist in a density of 0.64 numbers/cm2 or more, at 1200° C. or above for one second or more through use of a rapid heating/rapid cooling apparatus.
A heat treatment method for a silicon monocrystal wafer, comprising the steps of growing a silicon monocrystal ingot on a condition that COPs exist on a whole surface thereof while controlling a growth rate and oxygen concentration by Czochralski method, obtaining a silicon monocrystal wafer in which COPs exist in a density of 0.64 numbers/cm2 or more, manufactured by slicing the monocrystal ingot, and heat-treating in a reducing atmosphere the silicon monocrystal wafer in which COPs exist in a density of 0.64 numbers/cm2 or more, at 1200° C. or above for 30 minutes or more through use of a batchwise heat treatment furnace.
A heat treatment method of a silicon monocrystal wafer wherein the silicon wafer having COPs of a size of 60-130 nm existing on a whole surface thereof is subjected to heat treatment in a reducing atmosphere at a temperature of 1200° C. or above.
A heat treatment method of a silicon monocrystal wafer wherein the silicon wafer wherein COP existing on a whole surface thereof is crystal defect consisting of only one void is subjected to a heat treatment in a reducing atmosphere at a temperature of 1200° C. or above.
Dependencies are inferred from the claim text.