Semiconductor manufacturing apparatus and semiconductor device manufacturing method
AssigneeSony Corporation
InventorsTakayoshi Mamine, Nobuyuki Matsuzawa, Noriyuki Kishii
Life of this patent
Estimating the term…
Loading patent…
AssigneeSony Corporation
InventorsTakayoshi Mamine, Nobuyuki Matsuzawa, Noriyuki Kishii
Estimating the term…
To provide a semiconductor manufacturing apparatus and a semiconductor device manufacturing method able to form a sufficiently precise pattern by ablation. A semiconductor manufacturing apparatus comprising a light source emitting light of a first wavelength on the surface of a wafer and a mask through which at least a part of the light of the first wavelength passes and removing a material of the part of the wafer exposed by the light of the first wavelength by vaporization, wherein the light source comprises an electron beam generating means for generating an electron beam and a light emitting means for emitting light of a second wavelength longer than the first wavelength and wherein the light of the first wavelength is inverse Compton scattered light obtained by collision of electrons in the electron beam with photons in the light of the second wavelength causing the energy of the electrons to be given to the photons and a semiconductor device manufacturing method using the apparatus.
A semiconductor manufacturing apparatus comprising a light source emitting light of a first wavelength to a surface of a wafer and a mask through which at least a part of the light of the first wavelength passes and removing a material of a part of the wafer exposed by the light of the first wavelength by vaporization,
A semiconductor manufacturing apparatus comprising a light source emitting pulsed light to a surface of a wafer and a mask through which at least part of the pulsed light passes and removing a material of the part of the wafer exposed by the pulsed light by vaporization,
Dependencies are inferred from the claim text.